advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 30v simple drive requirement r ds(on) 10m fast switching characteristic i d 12.5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice thermal data parameter total power dissipation operating junction temperature range -55 to 150 continuous drain current 3 10 pulsed drain current 1 50 storage temperature range 2.5 -55 to 150 30 20 12.5 parameter drain-source voltage gate-source voltage continuous drain current 3 AP9408AGM rating rohs-compliant product 200810284 1 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12.5a - - 10 m ? ? , ?
ap9408ag m fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 0123 v ds , drain-to-source voltage (v) i d , drain current (a) v g = 4.0 v 10v 7.0 v 6.0 v 5.0 v t a =25 o c 0 10 20 30 40 50 001122 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0 v 6.0v 5.0 v v g = 4 .0 v 8 9 10 11 12 13 14 246810 v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9408AGM q v g 4.5v q gs q gd q g charge 0 2 4 6 8 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 12.5 a v ds =15v v ds =18v v ds =24v 0 200 400 600 800 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thia =125
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 9408a g m ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence e meet rohs requirement for low voltage mosfet only
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